A storage capacitor having high dielectric constant materials and a method for forming same are described. The method solves the problems associated with fabrication of planar capacitors for DRAM chips constructed from inorganic oxides with perovskite structure. These materials are not readily etched...http://www.google.es/patents/US5461536?utm_source=gb-gplus-sharePatente US5461536 - Storage capacitors using high dielectric constant materials
Storage capacitors using high dielectric constant materials
