In a semiconductor device having SiC vertical trench MOSFETs, it is aimed to prevent the generation of large scattering in the channel resistance without largely increasing the average value of channel resistance. A 4H-SiC substrate having a major face thereof that is generally a {0001} face and having...http://www.google.es/patents/US7615849?utm_source=gb-gplus-sharePatente US7615849 - Semiconductor device and manufacturing method thereof
Semiconductor device and manufacturing method thereof
