The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion...http://www.google.es/patents/US20020187631?utm_source=gb-gplus-sharePatente US20020187631 - Copper interconnect structure having stuffed diffusion barrier
Copper interconnect structure having stuffed diffusion barrier
Número de solicitud: 10/007,304 Número de publicación: US 2002/0187631 A1 Fecha de presentación: 5 Dic 2001 Patente emitida: US6936535 ( Fecha de emisión 30 Ago 2005)
