Methods are provided herein for forming electrode layers over high dielectric constant (“high k”) materials. In the illustrated embodiments, a high k gate dielectric, such as zirconium oxide, is protected from reduction during a subsequent deposition of silicon-containing gate electrode. In particular,...http://www.google.es/patents/US20050233529?utm_source=gb-gplus-sharePatente US20050233529 - Integration of high k gate dielectric
Número de solicitud: 11/148,721 Número de publicación: US 2005/0233529 A1 Fecha de presentación: 9 Jun 2005 Patente emitida: US7790556 ( Fecha de emisión 7 Sep 2010)
