Method for producing a metal silicon (oxy)nitride by introducing a carbon-free silicon source (for example, (SiH3)3N), a metal precursor with the general formula MXn (for example, Hf(NEt2)4), and an oxidizing agent (for example, O2) into a CVD chamber and reacting same at the surface of a substrate....http://www.google.es/patents/US7482286?utm_source=gb-gplus-sharePatente US7482286 - Method for forming dielectric or metallic films
