A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum,...http://www.google.es/patents/US20050020006?utm_source=gb-gplus-sharePatente US20050020006 - Semiconductor device and method for manufacturing the same
Semiconductor device and method for manufacturing the same
Número de solicitud: 10/926,059 Número de publicación: US 2005/0020006 A1 Fecha de presentación: 26 Ago 2004 Patente emitida: US7622335 ( Fecha de emisión 24 Nov 2009)
