A method of forming a semiconductor device is described. First, a substrate is provided. Thereafter, a gate structure including, from bottom to top, a high-k layer, a work function metal layer, a wetting layer, a polysilicon layer and a mask layer is formed on the substrate. Afterwards, a spacer is formed...http://www.google.es/patents/US7915127?utm_source=gb-gplus-sharePatente US7915127 - Manufacturing method of semiconductor device
