In the manufacture of MISFETs using an Si layer island having an SOI structure, the present invention provides an Si layer over an SiO.sub.2 insulation layer, having a groove passing underneath the Si layer gate region and being formed on the surface of the SiO.sub.2 insulation layer by side etching...http://www.google.es/patents/US5120666?utm_source=gb-gplus-sharePatente US5120666 - Manufacturing method for semiconductor device
