A method for controlling striations and CD loss in a plasma etching method is disclosed. During the etching process, the substrate of semiconductor material to be etched is exposed first to plasma under a low power strike and subsequently to a conventional high power strike. CD loss has been found to...http://www.google.es/patents/US7122480?utm_source=gb-gplus-sharePatente US7122480 - Method of plasma etching a substrate
