Photomask patterns are represented using contours defined by mask functions or other formats. Given target pattern, contours may be optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimized patterns or blocks may be simplified...http://www.google.es/patents/US20070009808?utm_source=gb-gplus-sharePatente US20070009808 - Systems, masks, and methods for manufacturable masks
Systems, masks, and methods for manufacturable masks
Número de solicitud: 11/245,691 Número de publicación: US 2007/0009808 A1 Fecha de presentación: 6 Oct 2005 Patente emitida: US7698665 ( Fecha de emisión 13 Abr 2010)
