A method of filling contact holes in a dielectric layer on an integrated circuit wafer. The method reduces processing steps and results in a reliable metal plug filling the contact hole. In one embodiment the contact hole is filled using blanket deposition of titanium silicide using chemical vapor deposition...http://www.google.es/patents/US5930671?utm_source=gb-gplus-sharePatente US5930671 - CVD titanium silicide for contract hole plugs
