A process for fabrication of a semiconductor device including a modified ONO structure, including forming the modified ONO structure by providing a semiconductor substrate; forming a first oxide layer on the semiconductor substrate; depositing a layer comprising a high-K dielectric material on the first...http://www.google.es/patents/US6674138?utm_source=gb-gplus-sharePatente US6674138 - Use of high-k dielectric materials in modified ONO structure for semiconductor devices
Use of high-k dielectric materials in modified ONO structure for ...
