A method of fabrication a semiconductor device includes the steps of forming an insulation film containing Si and oxygen on a silicon substrate, and depositing a metal oxide film on the insulation film by a chemical vapor deposition process that uses a metal organic source material, wherein the step...http://www.google.es/patents/US6953731?utm_source=gb-gplus-sharePatente US6953731 - Fabrication process of a semiconductor device
