A highly reliable semiconductor device having superior flatness and highly precise pattern is obtained. A first metal interconnection 7a is formed on a semiconductor substrate 1. An interlayer insulating film 8a is provided on semiconductor substrate 1 to cover the first metal interconnection 7a. A second...http://www.google.es/patents/US6087250?utm_source=gb-gplus-sharePatente US6087250 - Semiconductor device having multilayered metal interconnection structure and manufacturing method thereof
Semiconductor device having multilayered metal interconnection structure and ...
