A process for heat-treating a single crystal silicon wafer to influence the precipitation behavior of oxygen in the wafer in a subsequent thermal processing step. The wafer has a front surface, a back surface, a central plane between the front and back surfaces, and a sink for crystal lattice vacancies...http://www.google.es/patents/US6204152?utm_source=gb-gplus-sharePatente US6204152 - Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less ...
