A semiconductor device comprises a substrate (100), first conductive film (22 and 32) over the substrate (100), and a second conductive film (54 and 64) over the first conductive film (22 and 32). The first conductive film includes a refractory metal and nitrogen. The first conductive film has a first...http://www.google.es/patents/US5893752?utm_source=gb-gplus-sharePatente US5893752 - Process for forming a semiconductor device
