A partially-depleted Silicon-on-Insulator (SOI) substrate with minimal charge build up and suppressed floating body effect is disclosed, as well as a simple method for its fabrication. A thin Si/Ge epitaxial layer is grown between two adjacent epitaxial silicon layers of a SOI substrate, and as part...http://www.google.es/patents/US6746937?utm_source=gb-gplus-sharePatente US6746937 - PD-SOI substrate with suppressed floating body effect and method for its fabrication
PD-SOI substrate with suppressed floating body effect and method for its ...
