The use of atomic layer deposition (ALD) to form a nanolaminate dielectric of zirconium oxide (ZrO2), hafnium oxide (HfO2) and tin oxide (SnO2) acting as a single dielectric layer with a formula of Zrx Hfy Sn1-x-y O2, and a method of fabricating such a dielectric layer is described that produces a reliable...http://www.google.es/patents/US20080224240?utm_source=gb-gplus-sharePatente US20080224240 - ATOMIC LAYER DEPOSITION OF Zrx Hfy Sn1-x-y O2 FILMS AS HIGH k GATE DIELECTRICS
ATOMIC LAYER DEPOSITION OF Zrx Hfy Sn1-x-y O2 FILMS AS HIGH k GATE DIELECTRICS
Número de solicitud: 12/126,311 Número de publicación: US 2008/0224240 A1 Fecha de presentación: 23 May 2008 Patente emitida: US7875912 ( Fecha de emisión 25 Ene 2011)
