A semiconductor device includes an NMOSFET and a PMOSFET. Each MOSFET includes first and second impurity diffusion layers for forming a source region and a drain region which are formed in a silicon layer of an SOI substrate or the like, a channel region formed between the first and second impurity diffusion...http://www.google.es/patents/US6593634?utm_source=gb-gplus-sharePatente US6593634 - Semiconductor device and method of manufacturing the same
Semiconductor device and method of manufacturing the same
