A scaled MOSFET device of the present invention comprises a shallow-trench-isolation structure being formed on a semiconductor substrate; a conductive-gate structure having a pair of second conductive sidewall spacers formed over each inner sidewall of a gate region and on a first conductive layer and...http://www.google.es/patents/US6747328?utm_source=gb-gplus-sharePatente US6747328 - Scaled MOSFET device and its fabricating method
