A method of fabricating an integrated circuit having an n-channel and a p-channel transistor is provided. The method includes forming LDD regions for the n-channel transistors self-aligned to the gate electrodes. A first oxide is then formed over the structure and the n-type silicon regions are implanting...http://www.google.es/patents/US6221709?utm_source=gb-gplus-sharePatente US6221709 - Method of fabricating a CMOS integrated circuit device with LDD N-channel transistor and non-LDD P-channel transistor
Method of fabricating a CMOS integrated circuit device with LDD N-channel ...
