The gist of the present invention is as follows: In a monolithic microwave integrate circuit (MMIC) using a heterojunction bipolar transistor (HBT), via holes are respectively formed from the bottom of the MMIC for the emitter, base and collector. Of the via holes, one is located so as to face the HBT....http://www.google.es/patents/US7067857?utm_source=gb-gplus-sharePatente US7067857 - Semiconductor device having led out conductor layers, manufacturing method of the same, and semiconductor module
Semiconductor device having led out conductor layers, manufacturing method ...
