A method of forming a field effect transistor includes forming a tungsten nitride comprising layer proximate at least one of a semiconductive channel region or a conductive gate layer. The tungsten nitride comprising layer is oxidized under conditions effective to transform at least some of the tungsten...http://www.google.es/patents/US6596596?utm_source=gb-gplus-sharePatente US6596596 - Methods of forming a field effect transistors
