Methods and apparatus for achieving analog storage in a non-volatile memory array. The array consists of memory cells that utilize Fowler-Nordheim tunneling for erasure and hot electron injection for programming. Writing into a cell is performed by an initial erasure followed by a controlled sequence...http://www.google.es/patents/US5973956?utm_source=gb-gplus-sharePatente US5973956 - Non-volatile electrically alterable semiconductor memory for analog and digital storage
Non-volatile electrically alterable semiconductor memory for analog and ...
