A NAND string in which bit line-to-bit line noise is discharged prior to sensing a programming condition of a selected non-volatile storage element in the NAND string. A source voltage is applied which boosts the voltage in conductive NAND strings. The voltage boost results in capacitive coupling of...http://www.google.es/patents/US7545678?utm_source=gb-gplus-sharePatente US7545678 - Non-volatile storage with source bias all bit line sensing
Non-volatile storage with source bias all bit line sensing
