The present invention comprises the steps of forming a bump metal film as a pattern having an opening portion on an area of a seed metal film that corresponds to a connecting pad of a semiconductor substrate, forming a through hole by etching the seed metal film, the connecting pad, and the semiconductor...http://www.google.es/patents/US20040137661?utm_source=gb-gplus-sharePatente US20040137661 - Semiconductor device manufacturing method
Número de solicitud: 10/750,905 Número de publicación: US 2004/0137661 A1 Fecha de presentación: 5 Ene 2004 Patente emitida: US6831000 ( Fecha de emisión 14 Dic 2004)
