Memory cells, each formed of an EEPROM, are series-connected with transistors. Blocks, each of which is constructed by one memory cell and one transistor connected in series, are arranged in a matrix form. The memory cell and transistor of each block are controlled by different row lines. The memory...http://www.google.es/patents/US5610858?utm_source=gb-gplus-sharePatente US5610858 - Non-volatile semiconductor memory device and method of manufacturing the same
Non-volatile semiconductor memory device and method of manufacturing the same
