Embodiments of the invention generally provide a method of forming a nitride gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via introduction of a nitrogen-containing processing gas into the processing chamber and the application of an ionizing...http://www.google.es/patents/US20040038486?utm_source=gb-gplus-sharePatente US20040038486 - Plasma method and apparatus for processing a substrate
Plasma method and apparatus for processing a substrate
Número de solicitud: 10/461,083 Número de publicación: US 2004/0038486 A1 Fecha de presentación: 12 Jun 2003 Patente emitida: US6831021 ( Fecha de emisión 14 Dic 2004)
