A method of fabricating a SOI wafer using an isolation film as a polishing stopper, comprising the steps of: preparing a first and a second silicon substrates; implanting impurities into selected active regions of the first silicon substrate to a desired depth; etching the portion of the silicon substrate...http://www.google.es/patents/US6127244?utm_source=gb-gplus-sharePatente US6127244 - Method of manufacturing semiconductor device
