Disclosed are a semiconductor devices and method of fabricating the same. Anti-etch films are formed in the top corners of the device isolation film using a material that has a different etch selectivity ratio from nitride or oxide and is not etched in an oxide gate pre-cleaning process. It is thus possible...http://www.google.es/patents/US7081390?utm_source=gb-gplus-sharePatente US7081390 - Semiconductor device and a method of manufacturing the same
Semiconductor device and a method of manufacturing the same
