The magnetization state of a ferromagnetic layer can be set to correspond to different values of a data item to be stored in a hybrid memory device. The magnetization state is non-volatile, and a write circuit can be coupled to the ferromagnetic layer to reset or change the magnetization state to a different...http://www.google.es/patents/US6888746?utm_source=gb-gplus-sharePatente US6888746 - Magnetoelectronic memory element with inductively coupled write wires
Magnetoelectronic memory element with inductively coupled write wires
