Optoelectronic devices are provided that incorporate quantum dots as the electroluminescent layer in an inorganic wide-bandgap heterostructure. The quantum dots serve as the optically active component of the device and, in multilayer quantum dot embodiments, facilitate nanoscale epitaxial lateral overgrowth...http://www.google.es/patents/US7554109?utm_source=gb-gplus-sharePatente US7554109 - Quantum dot optoelectronic devices with nanoscale epitaxial lateral overgrowth and methods of manufacture
Quantum dot optoelectronic devices with nanoscale epitaxial lateral ...
