A process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases in a semiconductor substrate utilizes the stopping power of different layers of materials to determine the location of impurity concentrations induced by ion implantation....http://www.google.es/patents/US4025364?utm_source=gb-gplus-sharePatente US4025364 - Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases
Process for simultaneously fabricating epitaxial resistors, base resistors ...
