A non-volatile ferroelectric memory using a leakage current of a dielectric and a multi-numeration system ferroelectric memory are provided. Unit cells are formed of a transistor. A dielectric or a ferroelectric is used as a gate insulating material. A ferroelectric capacitor is deposited on ...http://www.google.es/patents/US5812442?utm_source=gb-gplus-sharePatente US5812442 - Ferroelectric memory using leakage current and multi-numeration system ferroelectric memory
Ferroelectric memory using leakage current and multi-numeration system ...
