Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having...http://www.google.es/patents/US7642585?utm_source=gb-gplus-sharePatente US7642585 - Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
Non-volatile memory cells, memory arrays including the same and methods of ...
