A vertical Triple Heterojunction Bipolar Transistor (THBT) and method of fabrication therefor. The THBT collector has a substrate layer of N.sup.+ silicon, an N.sup.- silicon layer grown on the substrate and a Si/SiGe superlattice grown on the N.sup.- silicon layer. The THBT base is layer of P.sup.+...http://www.google.es/patents/US5523243?utm_source=gb-gplus-sharePatente US5523243 - Method of fabricating a triple heterojunction bipolar transistor
Method of fabricating a triple heterojunction bipolar transistor
