A semiconductor device includes a semiconductor substrate, a first electrode that is formed over said semiconductor substrate, a capacitive insulating film that is formed on the first electrode and is made of a metal oxide ferroelectric, a second electrode that is formed on the capacitive insulating...http://www.google.es/patents/US20060220083?utm_source=gb-gplus-sharePatente US20060220083 - Semiconductor device
Número de solicitud: 11/306,387 Número de publicación: US 2006/0220083 A1 Fecha de presentación: 27 Dic 2005 Patente emitida: US7646050 ( Fecha de emisión 12 Ene 2010)
