The barrier material of the invention provides for the electrodeposition of copper. The barrier layer includes a dielectric interface surface region, and a copper interface surface region with at least 50 atom percent of a copper interface metal. In particular, the barrier layer of the invention provides...http://www.google.es/patents/US20030203617?utm_source=gb-gplus-sharePatente US20030203617 - Process of forming copper structures
Número de solicitud: 10/279,057 Número de publicación: US 2003/0203617 A1 Fecha de presentación: 24 Oct 2002 Patente emitida: US6812143 ( Fecha de emisión 2 Nov 2004)
