A method to improve a high-k dielectric film and metal gate interface in the fabrication of a MOSFET by depositing a metal gate on a high-k dielectric, the method includes annealing a substrate with a high-k dielectric film deposited thereon in a thermal annealing module and depositing a metal gate material...http://www.google.es/patents/US7655549?utm_source=gb-gplus-sharePatente US7655549 - Method for depositing a metal gate on a high-k dielectric film
Method for depositing a metal gate on a high-k dielectric film
