A method of forming a high aspect ratio via opening through multiple dielectric layers, a high aspect ratio electrically conductive via, methods of forming three-dimension integrated circuits, and three-dimensional integrated circuits. The methods include forming a stack of at least four dielectric layers...http://www.google.es/patents/US7955967?utm_source=gb-gplus-sharePatente US7955967 - Method of fabricating ultra-deep vias and three-dimensional integrated circuits using ultra-deep vias
Method of fabricating ultra-deep vias and three-dimensional integrated ...
