A ferroelectric RAM (Random Access Memory) device includes at least one memory cell constructed of one access transistor operating by a word line enable signal, and one ferroelectric capacitor connected between a bit line and the access transistor. The device has a cell array structure based on a repeated...http://www.google.es/patents/US7426130?utm_source=gb-gplus-sharePatente US7426130 - Ferroelectric RAM device and driving method
