A method for across-wafer critical dimension uniformity performance monitoring in the manufacture of semiconductor devices employs a number of optical endpoint detectors at sites at the wafer face which are spaced across the wafer face. Each optical endpoint detector is able to directly measure the end...http://www.google.es/patents/US5427878?utm_source=gb-gplus-sharePatente US5427878 - Semiconductor wafer processing with across-wafer critical dimension monitoring using optical endpoint detection
Semiconductor wafer processing with across-wafer critical dimension ...
