A semiconductor light emitting device has in sequence on a semiconductor substrate, a multilayer reflection film, a semiconductor layer, and a quantum well active layer. A distance between an upper surface of the multilayer reflection film and a lower surface of the quantum well active layer is 2/n or...http://www.google.es/patents/US20020011600?utm_source=gb-gplus-sharePatente US20020011600 - Semiconductor light emitting device for stably obtaining peak wave length of emission spectrum
Semiconductor light emitting device for stably obtaining peak wave length of ...
Número de solicitud: 09/883,497 Número de publicación: US 2002/0011600 A1 Fecha de presentación: 19 Jun 2001 Patente emitida: US6548824 ( Fecha de emisión 15 Abr 2003)
