A method for forming a semiconductor device having a reduced pitch is provided. A pad oxide layer is formed on a substrate, and a silicon nitride layer is formed on the pad oxide layer. A trimmed photoresist layer is formed on the silicon nitride layer, and the silicon nitride layer is etched using the...http://www.google.es/patents/US20050020043?utm_source=gb-gplus-sharePatente US20050020043 - Methods for reducing cell pitch in semiconductor devices
Methods for reducing cell pitch in semiconductor devices
