A process for forming a local interconnect includes applying a layer of metal over a semiconductor layer. A layer of metal silicide is formed over the layer of metal. The layer of metal silicide is patterned to define the boundaries of the local interconnect. The metal silicide is reacted with the layer...http://www.google.es/patents/US6294464?utm_source=gb-gplus-sharePatente US6294464 - Low resistance metal silicide local interconnects and a method of making
Low resistance metal silicide local interconnects and a method of making
