A method of fabricating a semiconductor-on-insulator structure from a pair of semiconductor wafers, includes forming an oxide layer on at least a first surface of a first one of the wafers and performing a bonding enhancement implantation step by ion implantation of a first species in the first surface...http://www.google.es/patents/US7183177?utm_source=gb-gplus-sharePatente US7183177 - Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement
Silicon-on-insulator wafer transfer method using surface activation plasma ...
