A transistor-type ferroelectric nonvolatile memory element having an MFMIS (metal-ferroelectric-metal-insulator-semiconductor) structure that can be highly densely integrated. The MFMIS transistor has a constitution in which the MFM (metal-ferroelectric-metal) structure and the MIS (metal-insulator-semiconductor)...http://www.google.es/patents/US6885048?utm_source=gb-gplus-sharePatente US6885048 - Transistor-type ferroelectric nonvolatile memory element
Transistor-type ferroelectric nonvolatile memory element
