A technique to control segregation of impurities when reforming crystallinity and crystallization of a semiconductor film by using a laser beam irradiation is provided. The present invention is to irradiate the substrate with applying ultrasonic vibration while keeping the end portion of the substrate...http://www.google.es/patents/US20070241086?utm_source=gb-gplus-sharePatente US20070241086 - Method for fabricating semiconductor film and semiconductor device and laser processing apparatus
Method for fabricating semiconductor film and semiconductor device and laser ...
Número de solicitud: 11/808,043 Número de publicación: US 2007/0241086 A1 Fecha de presentación: 6 Jun 2007 Patente emitida: US8106330 ( Fecha de emisión 31 Ene 2012)
