A semiconductor laser device has a GaAs substrate (11), a single- or multiple-quantum well (QW) structure including at least one InGaAs strained QW active layer (16), a pair of GaAsP or In.sub.z Ga.sub.1-z AsP barrier layers (15,17) (z.ltoreq.0.3) interposing therebetween the QW structure,...http://www.google.es/patents/US5832018?utm_source=gb-gplus-sharePatente US5832018 - Semiconductor laser device
