A static random access memory (SRAM) has a plurality of static memory cells each of which has a set of cross coupled inverters having first and second inverters. The first inverter has first and second transistors. The second inverter has primary and secondary transistors. Each of the first and the primary...http://www.google.es/patents/US5536960?utm_source=gb-gplus-sharePatente US5536960 - VLSIC semiconductor memory device with cross-coupled inverters with improved stability to errors
VLSIC semiconductor memory device with cross-coupled inverters with improved ...
